CAUSE AND EFFECT APPROACH TO RELIABILITY MODELING 
OF "GAS PHASE – SEMICONDUCTOR" SYSTEM  

Belozertsev Aleksandr Ivanovich, first deputy general director, Scientific-research Institute of physical measurements (440026, 8/10 Volodarskogo street, Penza, Russia),  suad-olka@yandex.ru
Al-Salim Suad Zuher, doctor of physical and mathematical sciences, professor, director general, Ltd "Omega" (199048, lit. In, 19-21 embankment of the Smolenka river, Saint-Petersburg, Russia), suad-olka@yandex.ru

543.5;543.26

10.21685/2307-4205-2017-3-1

The model of increase in reliability and consequently, and reliabilities of analytical measurements of vapors and gases is considered. Factors, the bound to the productive indicator expressed by mathematical dependence are investigated. For problems which are solved on the scale of real time and do not demand a  high precision of results of model operation, the determined model allowing to specify duration of an actual exposition for increase in accuracy of the quantitative calculations is constructed

model, an entropy, the determined processes, the reason, a corollary